Lateral epitaxy overgrowth ( LEO) of GaN and growth mechanism 横向过生长(LEO)外延GaN材料及其生长机理
Lateral Epitaxy of SOl under Laser Radiation The reduction mechanism of stacking faults in cubic GaN layers via lateral epitaxy is discussed. 绝缘衬底上硅膜的激光侧向外延对立方相GaN侧向外延过程中层错减少的机制进行了讨论。
D. The author proposed that liquid epitaxy fracture mechanism is an important emplacement process of some auriferous quartz along the D, P direction. 本文作者提出液压扩容破裂机制是沿D、P方向就位的某些含金石英脉的重要就位过程。
Chapter two introduces the growth techniques of superlattice and quantum well materials, the method of molecular beam epitaxy, growth mechanism and structures, and manufacture of sample. 第二章介绍了量子阱、超晶格材料的生长方法,介绍了分子束外延法(MBE),阐述了生长基理及其各部分组成,以及样品的制备。